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| savantic semiconductor product specification silicon npn power transistors 2SC3519 2SC3519a d escription with to-3pn package complement to type 2sa1386/a applications audio and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit 2SC3519 160 v cbo collector-base voltage 2SC3519a open emitter 180 v 2SC3519 160 v ceo collector-emitter voltage 2SC3519a open base 180 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 4 a p c collector power dissipation t c =25 130 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3519 2SC3519a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sa1386 160 v (br)ceo collector-emitter breakdown voltage 2sa1386a i c =25ma ;i b =0 180 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 2.0 v 2sa1386 v cb =160v; i e =0 i cbo collector cut-off current 2sa1386a v cb =180v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =5a ; v ce =4v 50 180 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 250 pf f t transition frequency i c =2a ; v ce =12v 50 mhz switching times t on rise time 0.20 s t s storage time 1.30 s t f fall time i c =10a;r l =4 b i b1 =- i b2 =1a v cc =40v 0.45 s h fe classifications o p y 50-100 70-140 90-180 savantic semiconductor product specification 3 silicon npn power transistors 2SC3519 2SC3519a package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors 2SC3519 2SC3519a |
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